Use of p- and n-type vapor phase doping and sub-melt laser...

Thin Solid Films 2010 Vol. 518; Iss. 6-supp-S1

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

N.D. Nguyen, E. Rosseel, S. Takeuchi, J.-L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J.C. Lin, W. Vandervorst, M. Caymax
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Volume:
518
Year:
2010
Language:
english
Pages:
1
DOI:
10.1016/j.tsf.2009.10.053
File:
PDF, 1.57 MB
english, 2010
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