High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors
Alessandro Molle, Silvia Baldovino, Sabina Spiga, Marco FanciulliVolume:
518
Year:
2010
Language:
english
Pages:
1
DOI:
10.1016/j.tsf.2009.10.065
File:
PDF, 1.66 MB
english, 2010