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Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates
E.K. Evangelou, M.S. Rahman, I.I. Androulidakis, A. Dimoulas, G. Mavrou, K.P. Giannakopoulos, D.F. Anagnostopoulos, R. Valicu, G.L. BorchertVolume:
518
Year:
2010
Language:
english
Pages:
8
DOI:
10.1016/j.tsf.2009.10.160
File:
PDF, 580 KB
english, 2010