Novel Gate Oxide Process for Realization of High Threshold...

Materials Science Forum 2014 / 2 Vol. 778-780

Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

Furuhashi, Masayuki, Tanioka, Toshikazu, Imaizumi, Masayuki, Miura, Naruhisa, Yamakawa, Satoshi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.985
Date:
February, 2014
File:
PDF, 306 KB
english, 2014
Conversion to is in progress
Conversion to is failed