Effect of Boron Implantation on 6H-SiC N-MOSFET Interface...

Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties

Godignon, Phillippe, Jordà, Xavier, Vellvehi, Miquel, Berberich, Stefan, Montserrat, Josep, Ottaviani, Laurent
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1303
File:
PDF, 321 KB
english, 2000
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