Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Godignon, Phillippe, Jordà, Xavier, Vellvehi, Miquel, Berberich, Stefan, Montserrat, Josep, Ottaviani, LaurentVolume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1303
File:
PDF, 321 KB
english, 2000