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Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium
J.D. Hwang, D.S. Lin, Y.L. Lin, W.T. Chang, G.H. YangVolume:
519
Year:
2010
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2010.08.114
File:
PDF, 621 KB
english, 2010