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Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 °C
M.M.R. Howlader, F. ZhangVolume:
519
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2010.08.144
File:
PDF, 454 KB
english, 2010