Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
M. Tungare, V.K. Kamineni, F. Shahedipour-Sandvik, A.C. DieboldVolume:
519
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2010.12.079
File:
PDF, 427 KB
english, 2011