Surface Roughness Variation during Si Atomic Layer Etching...

Electrochemical and Solid-State Letters 2005 Vol. 8; Iss. 11

Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation

Park, S. D., Oh, C. K., Lee, D. H., Yeom, G. Y.
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Volume:
8
Year:
2005
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2073667
File:
PDF, 339 KB
english, 2005
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