Schottky Barrier Characteristics of 3C-SiC Epilayers Grown...

Materials Science Forum 2000 Vol. 338-342

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Sekigawa, Toshihiro, Yoshida, Sadafumi
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1235
File:
PDF, 320 KB
english, 2000
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