Extremely low recombination velocity on crystalline silicon...

Thin Solid Films 2011 Vol. 519; Iss. 14

Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology

Taro Hayakawa, Motoharu Miyamoto, Koichi Koyama, Keisuke Ohdaira, Hideki Matsumura
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Volume:
519
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2011.01.301
File:
PDF, 432 KB
english, 2011
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