Growth of n-type γ-CuCl with improved carrier concentration...

Thin Solid Films 2011 Vol. 519; Iss. 18

Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties

K.V. Rajani, F. Olabanji Lucas, S. Daniels, D. Danieluk, A.L. Bradley, A. Cowley, M.M. Alam, P.J. McNally
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Volume:
519
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2011.03.036
File:
PDF, 757 KB
english, 2011
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