Growth of 3C–SiC on 150-mm Si(100) substrates by...

Thin Solid Films 2011 Vol. 519; Iss. 19

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

Li Wang, Sima Dimitrijev, Jisheng Han, Alan Iacopi, Leonie Hold, Philip Tanner, H. Barry Harrison
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Volume:
519
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2011.04.224
File:
PDF, 409 KB
english, 2011
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