Temperature and well number dependence of exciton...

Semiconductor Science and Technology 2007 / 12 Vol. 22; Iss. 12

Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells

Pecharromán-Gallego, R
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/12/006
Date:
December, 2007
File:
PDF, 546 KB
english, 2007
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