Evidence for Oxidation Growth at the Oxide-Silicon...

Journal of The Electrochemical Society 1964 Vol. 111; Iss. 7

Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch Studies

Pliskin, W. A., Gnall, R. P.
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Volume:
111
Year:
1964
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2426271
File:
PDF, 206 KB
english, 1964
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