Formation of Passivated Layers in P-Type SiC by Low Energy...

Materials Science Forum 2000 Vol. 338-342

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

Achtziger, N., Hülsen, C., Janson, Martin S., Linnarsson, Margareta K., Svensson, Bengt G., Witthuhn, W.
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.933
File:
PDF, 360 KB
english, 2000
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