4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Materials Science Forum 2014 / 2 Vol. 778-780

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

Tokuda, Yuichiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu, Onda, Shoichi
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.51
Date:
February, 2014
File:
PDF, 506 KB
english, 2014
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