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Process and Device Simulation for MOS-VLSI Circuits || Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices
Antognetti, Paolo, Antoniadis, Dimitri A., Dutton, Robert W., Oldham, William G.Volume:
10.1007/97
Year:
1983
Language:
english
DOI:
10.1007/978-94-009-6842-4_2
File:
PDF, 4.24 MB
english, 1983