High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers...

Materials Science Forum 1998 Vol. 264-268

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Kimoto, Tsunenobu, Wahab, Qamar-ul, Ellison, Alexsandre, Forsberg, Urban, Tuominen, M., Yakimova, Rositza, Henry, Anne, Janzén, Erik
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.921
File:
PDF, 350 KB
1998
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