Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System
Akhmetov, V.D., Kittler, Martin, Seifert, Winfried, Marschmeyer, S., Richter, Hans, Formanek, P., Doerschel, J.Volume:
95-96
Year:
2004
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.95-96.647
File:
PDF, 175 KB
english, 2004