High-performance Al-free In0.75Ga0.25P/InP/InxGa1-xAs/InP...

Electronics Letters 1995 / 03 Vol. 31; Iss. 5

High-performance Al-free In0.75Ga0.25P/InP/InxGa1-xAs/InP (x ≥ 53%) backside-doped split-channel HFETs with 0.25 µm T-gates

Heime, K., Sommer, V., Mesquida Küsters, A., Kohl, A., Behres, A., Wüller, R., Puls, C.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950286
Date:
March, 1995
File:
PDF, 381 KB
english, 1995
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