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Structural and electrical analysis of the atomic layer deposition of HfO[sub 2]/n-In[sub 0.53]Ga[sub 0.47]As capacitors with and without an Al[sub 2]O[sub 3] interface control layer
A. O’mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan, E. O’connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, M. E. PembleYear:
2010
Language:
english
DOI:
10.1063/1.3473773
File:
PDF, 731 KB
english, 2010