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Slow positron implantation spectroscopy—a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
G. Brauer, W. Anwand, P.G. Coleman, W. SkorupaVolume:
78
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.vacuum.2005.01.015
File:
PDF, 211 KB
english, 2005