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In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
Hatayama, Tomoaki, Fuyuki, Takashi, Nakamura, Shun-ichi, Kurobe, K., Kimoto, Tsunenobu, Matsunami, HiroyukiVolume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.361
File:
PDF, 326 KB
english, 2000