Two-dimensional modelling of diffusion of low-energy implanted arsenic in silicon at rapid thermal annealing
F.F. Komarov, A.M. Mironov, G.M. Zayats, V.A. Tsurko, O.I. Velichko, A.F. Komarov, A.I. BelousVolume:
81
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.vacuum.2007.01.012
File:
PDF, 216 KB
english, 2007