Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy
Giannazzo, Filippo, Iucolano, Ferdinando, Roccaforte, Fabrizio, Romano, Lucia, Grimaldi, Maria Grazia, Raineri, VitoVolume:
131-133
Year:
2008
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.131-133.491
File:
PDF, 375 KB
english, 2008