![](/img/cover-not-exists.png)
Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer
Zschieschang, Ute, Holzmann, Tanja, Kuhn, Alexander, Aghamohammadi, Mahdieh, Lotsch, Bettina V., Klauk, HagenVolume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4914488
Date:
March, 2015
File:
PDF, 3.05 MB
english, 2015