Low Density of Interface States in n-Type 4H-SiC MOS...

Materials Science Forum 2005 Vol. 483-485

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Ciobanu, Florin, Pensl, Gerhard, Afanas'ev, Valery V., Schöner, Adolf
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.693
File:
PDF, 244 KB
english, 2005
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