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Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
Morishita, Ryuji, Yano, Hiroshi, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, TakashiVolume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.739
Date:
May, 2012
File:
PDF, 297 KB
english, 2012