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Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability
Sheng Lin, Yong-Bin Kim, Fabrizio LombardiVolume:
43
Year:
2010
Language:
english
Pages:
12
DOI:
10.1016/j.vlsi.2010.01.003
File:
PDF, 1.23 MB
english, 2010