Low-Temperature Growth of SiO 2...

Japanese Journal of Applied Physics 1989 / 9 Vol. 28; Iss. Part 1, No

Low-Temperature Growth of SiO 2 /InP Structure Prepared by Photo-CVD

Su, Y. K., Huang, C. R., Chou, Y. C.
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.1664
Date:
September, 1989
File:
PDF, 564 KB
1989
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