6.5 V High Threshold Voltage AlGaN/GaN Power...

IEEE Electron Device Letters 2015 / 4 Vol. 36; Iss. 4

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Wang, Yun-Hsiang, Liang, Yung C., Samudra, Ganesh S., Huang, Huolin, Huang, Bo-Jhang, Huang, Szu-Han, Chang, Ting-Fu, Huang, Chih-Fang, Kuo, Wei-Hung, Lo, Guo-Qiang
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2015.2401736
Date:
April, 2015
File:
PDF, 973 KB
english, 2015
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