The Dependence of Threshold Voltage Scattering of GaAs...

Japanese Journal of Applied Physics 1985 / 1 Vol. 24; Iss. Part 2, No

The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method

Egawa, Takashi, Sano, Yoshiaki, Nakamura, Hiroshi, Ishida, Toshimasa, Kaminishi, Katsuzo
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Volume:
24
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L35
Date:
January, 1985
File:
PDF, 440 KB
1985
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