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Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory
Kim, Jongmin, Kim, Duhwan, Jo, Yongcheol, Han, Jaeseok, Woo, Hyeonseok, Kim, Hyungsang, Kim, K.K., Hong, J.P., Im, HyunsikVolume:
589
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2015.05.002
Date:
August, 2015
File:
PDF, 738 KB
english, 2015