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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, CA (Saturday 22 January 2005)] Physics and Simulation of Optoelectronic Devices XIII - Growth and characterization of beta-Ga2O3 single crystals as transparent conductive substrates for GaN (Invited Paper)
Shimamura, Kiyoshi, Villora, Encarnacion G., Aoki, Kazuo, Ichinose, Noboru, Osinski, Marek, Henneberger, Fritz, Amano, HiroshiVolume:
5722
Year:
2005
Language:
english
DOI:
10.1117/12.601956
File:
PDF, 1.13 MB
english, 2005