Copper Barrier Properties of Low Dielectric Constant SiOCNH Film Deposited by Plasma-Enhanced CVD
Shioya, Yoshimi, Ishimaru, Tomomi, Ikakura, Hiroshi, Nishimoto, Yuko, Ohdaira, Toshiyuki, Suzuki, Ryoichi, Maeda, KazuoVolume:
151
Year:
2004
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1629099
File:
PDF, 1.05 MB
english, 2004