Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers
Périchaud, Isabelle, Simon, J.J.Volume:
51-52
Year:
1996
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.51-52.117
File:
PDF, 1023 KB
1996