Metal-Gate Granularity-Induced Threshold Voltage...

IEEE Transactions on Electron Devices 2014 / 11 Vol. 61; Iss. 11

Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs

Nayak, Kaushik, Agarwal, Samarth, Bajaj, Mohit, Oldiges, Philip J., Murali, Kota V. R. M., Rao, Valipe Ramgopal
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2351401
Date:
November, 2014
File:
PDF, 1.25 MB
english, 2014
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