Strain relaxation of Si 0.75 Ge 0.25 in hydrogen-implanted Si 0.75 Ge 0.25 /B-doped Si 0.70 Ge 0.30 /Si heterostructure
Chen, Da, Xue, Zhongying, Wang, Gang, Guo, Qinglei, Liu, Linjie, Zhang, Miao, Liu, Su, Wei, XingVolume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.061302
Date:
June, 2014
File:
PDF, 814 KB
english, 2014