Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face...

Materials Science Forum 2014 / 2 Vol. 778-780

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

Tamura, Kentaro, Kudou, Chiaki, Masumoto, Keiko, Nishio, Johji, Kojima, Kazutoshi
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.214
Date:
February, 2014
File:
PDF, 3.79 MB
english, 2014
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