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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications II - Trieste, France (Sunday 23 May 1993)] Physical Concepts and Materials for Novel Optoelectronic Device Applications II - Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates
Chertouk, Mourad, Boudiaf, A., Azoulay, Rozette, Clei, A., Beltram, Fabio, Gornik, ErichVolume:
1985
Year:
1993
DOI:
10.1117/12.162759
File:
PDF, 762 KB
1993