On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
Sadeghi, M., Liss, B., Sveinbjörnsson, Einar Ö., Engström, O.Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.981
File:
PDF, 358 KB
1998