On the Interpretation of High-Frequency Capacitance Data of...

On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium

Sadeghi, M., Liss, B., Sveinbjörnsson, Einar Ö., Engström, O.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.981
File:
PDF, 358 KB
1998
Conversion to is in progress
Conversion to is failed