Delineation of Defects Reducing Schottky Barrier Heights on...

Materials Science Forum 2009 Vol. 600-603

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

Kato, Masashi, Ogawa, Kazuya, Ichimura, Masaya
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.373
File:
PDF, 516 KB
english, 2009
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