[IEEE 2015 28th International Conference on VLSI Design (VLSID) - Bangalore, India (2015.1.3-2015.1.7)] 2015 28th International Conference on VLSI Design - Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics
Kranthi, N.K., Sithanandam, Radhakrishnan, Komaragiri, RamaYear:
2015
Language:
english
DOI:
10.1109/VLSID.2015.54
File:
PDF, 391 KB
english, 2015