Defect Control in Growth and Processing of 4H-SiC for Power...

Materials Science Forum 2010 / 4 Vol. 645-648

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Kimoto, Tsunenobu, Feng, Gan, Hiyoshi, Toru, Kawahara, Koutarou, Noborio, Masato, Suda, Jun
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.645
Date:
April, 2010
File:
PDF, 583 KB
english, 2010
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