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The Effect of Nitrogen in a p[sup +] Polysilicon Gate on Boron Penetration Through the Gate Oxide
Nakayama, SatoshiVolume:
144
Year:
1997
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1838186
File:
PDF, 1.31 MB
english, 1997