Temperature Dependence of Inversion Layer Carrier...

Materials Science Forum 2012 / 5 Vol. 717-720

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Dhar, Sarit, Ahyi, Ayayi Claude, Williams, John R., Ryu, Sei Hyung, Agarwal, Anant K.
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.713
Date:
May, 2012
File:
PDF, 325 KB
english, 2012
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