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Effective Mobility Enhancement in Al 2 O 3 /InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers
Ito, Taihei, Kadoda, Azusa, Nakayama, Koji, Yasui, Yuichiro, Mori, Masayuki, Maezawa, Koichi, Miyazaki, Eiji, Mizutani, TakashiVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CF01
Date:
April, 2013
File:
PDF, 204 KB
english, 2013