Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis...

Chinese Physics Letters 2013 / 12 Vol. 30; Iss. 12

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Liu, Bin, Sun, Guo-Sheng, Liu, Xing-Fang, Zhang, Feng, Dong, Lin, Zheng, Liu, Yan, Guo-Guo, Liu, Sheng-Bei, Zhao, Wan-Shun, Wang, Lei, Zeng, Yi-Ping, Li, Xi-Guang, Wang, Zhan-Guo, Yang, Fei
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Volume:
30
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307x/30/12/128101
Date:
December, 2013
File:
PDF, 1.04 MB
english, 2013
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