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The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
Jin, Li, Hong-Xia, Liu, Bin, Li, Lei, Cao, Bo, YuanVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/10/107301
Date:
October, 2010
File:
PDF, 236 KB
english, 2010